SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8

Fa'amatalaga Puupuu:

Tufuga: Vishay
Vaega o oloa:MOSFET
Pepa Fa'amatalaga:SI7461DP-T1-GE3
Fa'amatalaga:MOSFET P-CH 60V 8.6A PPAK SO-8
RoHS tulaga: RoHS Compliant


Fa'amatalaga Oloa

Vaega

Faailoga o oloa

♠ Faʻamatalaga o oloa

Uiga Oloa Uiga Taua
Tufuga: Vishay
Vaega o oloa: MOSFET
RoHS: Fa'amatalaga
Tekinolosi: Si
Tulaga fa'apipi'i: SMD/SMT
Paket/Mataupu: SOIC-8
Transistor Polarity: P-Alāvai
Numera o Auala: 1 alavai
Vds - Fa'avai-Apo'a Va'aiga Malosi: 30 V
Id - Fa'a'au'au Fa'aauau le taimi nei: 5.7 A
Rds On - Fa'avai-Source Resistance: 42 mOhm
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Totogi Faitotoa: 24 nC
La'ititi ole Vevela ole Gaioiina: - 55C
Maualuluga Fa'agaioiga Vevela: + 150C
Pd - Fa'amama le Malosi: 2.5W
Auala ala: Fa'aleleia
igoa Fefa'ataua'iga: TrenchFET
afifiina: Reel
afifiina: Oti le lipine
afifiina: MouseReel
Fa'ailoga: Vishay Semiconductors
Fa'atonuga: Nofofua
Taimi o le Pau: 30 ns
Fa'asagaga i luma - Min: 13 S
Ituaiga oloa: MOSFET
Taimi tula'i: 42 ns
Fa'asologa: SI9
Aofaiga o pusa falegaosimea: 2500
Vaega laiti: MOSFETs
Ituaiga Transistor: 1 P-Alāvai
Taimi Fa'atuai Taimi masani: 30 ns
Taimi Fa'atuai masani: 14 ns
Vaega # Fa'aigoa: SI9435BDY-E3
Unit mamafa: 750 mg

  • Muamua:
  • Sosoo ai:

  • • MOSFET malosi a TrenchFET®

    • Fa'amama maualalo le fa'afefe PowerPAK® afifi ma lalo ifo 1.07 mm profileEC

    Oloa Fa'atatau