SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P SIGA
♠ Faʻamatalaga o oloa
| Uiga Oloa | Uiga Taua |
| Tufuga: | Vishay |
| Vaega o oloa: | MOSFET |
| RoHS: | Fa'amatalaga |
| Tekinolosi: | Si |
| Tulaga fa'apipi'i: | SMD/SMT |
| Paket/Mataupu: | SC-89-6 |
| Transistor Polarity: | N-Alāvai, P-Alāvai |
| Numera o Auala: | 2 Alavai |
| Vds - Fa'avai-Apo'a Va'aiga Malosi: | 60 V |
| Id - Fa'a'au'au Fa'aauau le taimi nei: | 500 mA |
| Rds On - Fa'avai-Source Resistance: | 1.4 Ohms, 4 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Totogi Faitotoa: | 750 pC, 1.7 nC |
| La'ititi ole Vevela ole Gaioiina: | - 55C |
| Maualuluga Fa'agaioiga Vevela: | + 150C |
| Pd - Fa'amama le Malosi: | 280 mW |
| Auala ala: | Fa'aleleia |
| igoa Fefa'ataua'iga: | TrenchFET |
| afifiina: | Reel |
| afifiina: | Oti le lipine |
| afifiina: | MouseReel |
| Fa'ailoga: | Vishay Semiconductors |
| Fa'atonuga: | Lua |
| Fa'asagaga i luma - Min: | 200 mS, 100 mS |
| Maualuluga: | 0.6 mm |
| Umi: | 1.66 mm |
| Ituaiga oloa: | MOSFET |
| Fa'asologa: | SI1 |
| Aofaiga o pusa falegaosimea: | 3000 |
| Vaega laiti: | MOSFETs |
| Ituaiga Transistor: | 1 N-Alāvai, 1 P-Alāvai |
| Taimi Fa'atuai Taimi masani: | 20 ns, 35 ns |
| Taimi Fa'atuai masani: | 15 ns, 20 ns |
| Lautele: | 1.2 mm |
| Vaega # Fa'aigoa: | SI1029X-GE3 |
| Unit mamafa: | 32 mg |
• E leai se Halogen E tusa ai ma le IEC 61249-2-21 Fa'amatalaga
• TrenchFET® Power MOSFETs
• Tulaga Laiti Laiti
• Suiga Itu Maualuga
• Maualalo i le tetee:
N-Alāvai, 1.40 Ω
Auala-P, 4 Ω
• Fa'apito Maulalo: ± 2 V (ituaiga)
• Saosaoa Suiga Saosaoa: 15 ns (ituaiga)
• Puipuia le Faitotoa-Source ESD: 2000 V
• Tausi i le RoHS Directive 2002/95/EC
• Suia Digital Transistor, Level-Shifter
• Faiga Fa'atonuina maa
• Lisi Fa'aliliuga Sapalai Malosiaga
