O se ituaiga fou o le hafnium-based ferroelectric memory chip na atiae ma mamanuina e Liu Ming, Academician o le Institute of Microelectronics, ua tuuina atu i le IEEE International Solid-State Circuits Conference (ISSCC) i le 2023, o le maualuga maualuga o le tuufaatasia o mamanu matagaluega.
O lo'o maualuga le mana'oga mo tupe meataalo SOC i mea tau fa'aeletonika, ta'avale tuto'atasi, fa'atonuga o fale gaosi oloa ma masini pito mo le Initaneti o Mea.Ferroelectric memory (FeRAM) o loʻo i ai le lelei o le faʻatuatuaina maualuga, faʻaogaina o le eletise ultra-maualalo, ma le saoasaoa maualuga.E faʻaaogaina lautele i le tele o faʻamaumauga o faʻamaumauga i le taimi moni, faitau ma tusitusi faʻamatalaga faifaipea, faʻaitiitia le eletise ma faʻapipiʻi oloa SoC / SiP.Ferroelectric manatua e faavae i luga o mea PZT ua ausia le tele o gaosiga, ae o ana mea e le ogatasi ma le CMOS tekinolosi ma faigata ona faʻaitiitia, e taʻitaʻia ai le atinaʻeina o le masani masani ferroelectric manatua ua matua faʻalavelaveina, ma tuʻufaʻatasia faʻapipiʻiina e manaʻomia se lagolago tuʻufaʻatasia laina gaosiga, faigata ona faʻalauiloa. i se fua tele.Ole fa'aitiitiga ole manatuaga ferroelectric fou e fa'avae i le hafnium ma lona fetaui ma le tekonolosi CMOS ua avea ai ma nofoaga autu o su'esu'ega o popolega masani i a'oga ma alamanuia.O le manatuaga ferroelectric e faavae i le Hafnium ua manatu o se itu taua o le atinaʻeina o le isi augatupulaga o manatuaga fou.I le taimi nei, o le suʻesuʻega o le hafnium-based ferroelectric memory o loʻo i ai pea faʻafitauli e pei o le le lava o le faʻalagolago i le iunite, le lava o le mamanu o le vaʻa ma le faʻaogaina atoa o le vaʻaia, ma le faʻamaonia atili o le faʻatinoga o le chip, lea e faʻatapulaʻaina ai lona faʻaogaina i le eNVM.
O le faʻamoemoe i luitau o loʻo feagai ma le faʻaogaina o le hafnium-based ferroelectric memory, o le 'au a le Academician Liu Ming mai le Institute of Microelectronics ua mamanuina ma faʻatinoina le megab-magnitude FeRAM suʻega puʻe mo le taimi muamua i le lalolagi e faʻavae i luga o le faʻavae tuʻufaʻatasia tele. o le manatua ferroelectric faʻavae hafnium e fetaui ma le CMOS, ma faʻamaeʻaina lelei le tuʻufaʻatasia tele o le HZO ferroelectric capacitor i le 130nm CMOS process.O se ta'amilosaga ta'avale tusitusi e fesoasoani i le ECC mo le fa'alogoina o le vevela ma se fa'amalo ma'ale'ale mo le fa'ate'aina otometi o lo'o fa'atonuina, ma 1012 le umi o le ta'amilosaga ma le 7ns tusitusi ma le 5ns taimi faitau e ausia, o tulaga sili ia ua lipotia mai i le taimi nei.
O le pepa "A 9-Mb HZO-based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh" e faʻavae i luga o iʻuga ma Offset-Canceled Sense Amplifier "na filifilia i le ISSCC 2023, ma na filifilia le chip i le ISSCC Demo Session e faʻaalia i le konafesi.O Yang Jianguo o le tusitala muamua o le pepa, ma o Liu Ming o le tusitala tutusa.
O galuega fa'atatau e lagolagoina e le National Natural Science Foundation o Saina, le National Key Research and Development Programme a le Matagaluega o Saienisi ma Tekinolosi, ma le B-Class Pilot Project a le Chinese Academy of Sciences.
(Ata o le 9Mb Hafnium-faʻavae FeRAM puʻe ma suʻega faʻatinoga)
Taimi meli: Apr-15-2023