IKW50N65ES5XKSA1 IGBT Transistors ALUSAGA 14

Fa'amatalaga Puupuu:

Tufuga: Infineon Technologies
Vaega o oloa: Transistors - IGBTs - Nofofua
Pepa Fa'amatalaga:IKW50N65ES5XKSA1
Faʻamatalaga: IGBT TRENCH 650V 80A TO247-3
RoHS tulaga: RoHS Compliant


Fa'amatalaga Oloa

Vaega

Talosaga

Faailoga o oloa

♠ Faʻamatalaga o oloa

Uiga Oloa Uiga Taua
Tufuga: Infineon
Vaega o oloa: IGBT Transistors
Tekinolosi: Si
Paket/Mata: TO-247-3
Tulaga fa'apipi'i: E ala i le Pu
Fa'atonuga: Nofofua
Aoina- Emitter Voltage VCEO Max: 650 V
Voltage Saturation Voltage-Emitter: 1.35 V
Maualuluga ole Faitotoa Emitter Voltage: 20 V
Fa'aauau le Aoina ile 25C: 80 A
Pd - Fa'amama le Malosi: 274 W
La'ititi ole Vevela ole Gaioiina: - 40C
Maualuluga Fa'agaioiga Vevela: + 175 C
Fa'asologa: TRENCHSTOP 5 S5
afifiina: Faila
Fa'ailoga: Infineon Technologies
Gate-Emitter Leakage taimi nei: 100 nA
Maualuluga: 20.7 mm
Umi: 15.87 mm
Ituaiga oloa: IGBT Transistors
Aofaiga o pusa falegaosimea: 240
Vaega laiti: IGBTs
igoa Fefa'ataua'iga: TRENCHSTOP
Lautele: 5.31 mm
Vaega # Fa'aigoa: IKW50N65ES5 SP001319682
Unit mamafa: 0.213537 oz

 


  • Muamua:
  • Sosoo ai:

  • HighspeedS5technologyoffering
    •Meafaigaluega fa'alelei fa'alelei maualuga mo le su'i ma'ale'ale
    •VeryLowVCEsat,1.35Vatnominalcurrent
    •Plugandplayreplacement of the previous generationIGBTs
    •650Vbreakdownvoltage
    • LowgatechargeQG
    IGBT fa'apipi'i fa'atasi ma RAPID1fastantiparalleldiode atoatoa
    •Temperature aupito maualuga175°C
    • Agavaa e tusa ai ma leJEDEC mo talosaga fa'atatau
    •Pb-freeleadplating;RoHScompliant
    •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/

    •Resonantconverters
    •Sapalai malosi e le motusia
    • Uu faaliliu
    • Midtohighrangeswitching frequencyconverters

    Oloa Fa'atatau