FDV301N MOSFET N-Ch Digital

Fa'amatalaga Puupuu:

Tufuga: ON Semiconductor

Vaega o oloa: Transistors - FETs, MOSFETs - Nofofua

Pepa Fa'amatalaga:FDV301N

Fa'amatalaga: MOSFET N-CH 25V 220MA SOT-23

RoHS tulaga: RoHS Compliant


Fa'amatalaga Oloa

Vaega

Faailoga o oloa

♠ Faʻamatalaga o oloa

Uiga Oloa Uiga Taua
Tufuga: onsemi
Vaega o oloa: MOSFET
RoHS: Fa'amatalaga
Tekinolosi: Si
Tulaga fa'apipi'i: SMD/SMT
Paket/Mata: SOT-23-3
Transistor Polarity: N-Alāvai
Numera o Auala: 1 alavai
Vds - Fa'avai-Apo'a Va'aiga Malosi: 25 V
Id - Fa'a'au'au Fa'aauau le taimi nei: 220 mA
Rds On - Fa'avai-Source Resistance: 5 Ohm
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
Qg - Totogi Faitotoa: 700 pC
La'ititi ole Vevela ole Gaioiina: - 55C
Maualuluga Fa'agaioiga Vevela: + 150C
Pd - Fa'amama le Malosi: 350 mW
Auala ala: Fa'aleleia
afifiina: Reel
afifiina: Oti le lipine
afifiina: MouseReel
Fa'ailoga: onsemi / Fairchild
Fa'atonuga: Nofofua
Taimi o le Pau: 6 ns
Fa'asagaga i luma - Min: 0.2 S
Maualuluga: 1.2 mm
Umi: 2.9 mm
Oloa: MOSFET Laititi Faailoga
Ituaiga oloa: MOSFET
Taimi tula'i: 6 ns
Fa'asologa: FDV301N
Aofaiga o pusa falegaosimea: 3000
Vaega laiti: MOSFETs
Ituaiga Transistor: 1 N-Alāvai
Ituaiga: FET
Taimi Fa'atuai Taimi masani: 3.5 ns
Taimi Fa'atuai masani: 3.2 ns
Lautele: 1.3 mm
Vaega # Fa'aigoa: FDV301N_NL
Unit mamafa: 0.000282 oz

♠ FET numera, N-Ala FDV301N, FDV301N-F169

O lenei N−Channel logic level enhancement mode field effect transistor e gaosia i le fa'aogaina o le onsemi, maualuga le maualuga, tekonolosi DMOS.O lenei faiga e matua'i maualuga tele e fa'apitoa e fa'atatau e fa'aitiitia ai le tete'e i luga o le setete.O lenei masini ua mamanuina faʻapitoa mo faʻaoga eletise maualalo e fai ma sui mo transistors numera.Talu ai e le mana'omia ni fa'aituau fa'aituau, e mafai e lenei N−channel FET ona sui le tele o transistors numera eseese, fa'atasi ai ma tulaga fa'aituau eseese.


  • Muamua:
  • Sosoo ai:

  • • 25 V, 0.22 A Fa'aauau, 0.5 A Tulaga

    ♦ RDS(i) = 5 @ VGS = 2.7 V

    ♦ RDS(i) = 4 @ VGS = 4.5 V

    • Tulaga Maulalo Tulaga Faitoto'a Tulaga Mana'oga Fa'ataga Fa'agaoioi Tu'usa'o ile 3 V Circuit.VGS(th) <1.06 V

    • Gate−Source Zener mo ESD Ruggedness.> 6 kV Fa'ata'ita'iga Tino o le Tagata

    • Suia le Tele NPN Digital Transistors i le tasi DMOS FET

    • Lenei masini e Pb−Free ma Halide Free

    Oloa Fa'atatau