FDV301N MOSFET N-Ch Digital
♠ Faʻamatalaga o oloa
Uiga Oloa | Uiga Taua |
Tufuga: | onsemi |
Vaega o oloa: | MOSFET |
RoHS: | Fa'amatalaga |
Tekinolosi: | Si |
Tulaga fa'apipi'i: | SMD/SMT |
Paket/Mata: | SOT-23-3 |
Transistor Polarity: | N-Alāvai |
Numera o Auala: | 1 alavai |
Vds - Fa'avai-Apo'a Va'aiga Malosi: | 25 V |
Id - Fa'a'au'au Fa'aauau le taimi nei: | 220 mA |
Rds On - Fa'avai-Source Resistance: | 5 Ohm |
Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage: | 700 mV |
Qg - Totogi Faitotoa: | 700 pC |
La'ititi ole Vevela ole Gaioiina: | - 55C |
Maualuluga Fa'agaioiga Vevela: | + 150C |
Pd - Fa'amama le Malosi: | 350 mW |
Auala ala: | Fa'aleleia |
afifiina: | Reel |
afifiina: | Oti le lipine |
afifiina: | MouseReel |
Fa'ailoga: | onsemi / Fairchild |
Fa'atonuga: | Nofofua |
Taimi o le Pau: | 6 ns |
Fa'asagaga i luma - Min: | 0.2 S |
Maualuluga: | 1.2 mm |
Umi: | 2.9 mm |
Oloa: | MOSFET Laititi Faailoga |
Ituaiga oloa: | MOSFET |
Taimi tula'i: | 6 ns |
Fa'asologa: | FDV301N |
Aofaiga o pusa falegaosimea: | 3000 |
Vaega laiti: | MOSFETs |
Ituaiga Transistor: | 1 N-Alāvai |
Ituaiga: | FET |
Taimi Fa'atuai Taimi masani: | 3.5 ns |
Taimi Fa'atuai masani: | 3.2 ns |
Lautele: | 1.3 mm |
Vaega # Fa'aigoa: | FDV301N_NL |
Unit mamafa: | 0.000282 oz |
♠ FET numera, N-Ala FDV301N, FDV301N-F169
O lenei N−Channel logic level enhancement mode field effect transistor e gaosia i le fa'aogaina o le onsemi, maualuga le maualuga, tekonolosi DMOS.O lenei faiga e matua'i maualuga tele e fa'apitoa e fa'atatau e fa'aitiitia ai le tete'e i luga o le setete.O lenei masini ua mamanuina faʻapitoa mo faʻaoga eletise maualalo e fai ma sui mo transistors numera.Talu ai e le mana'omia ni fa'aituau fa'aituau, e mafai e lenei N−channel FET ona sui le tele o transistors numera eseese, fa'atasi ai ma tulaga fa'aituau eseese.
• 25 V, 0.22 A Fa'aauau, 0.5 A Tulaga
♦ RDS(i) = 5 @ VGS = 2.7 V
♦ RDS(i) = 4 @ VGS = 4.5 V
• Tulaga Maulalo Tulaga Faitoto'a Tulaga Mana'oga Fa'ataga Fa'agaoioi Tu'usa'o ile 3 V Circuit.VGS(th) <1.06 V
• Gate−Source Zener mo ESD Ruggedness.> 6 kV Fa'ata'ita'iga Tino o le Tagata
• Suia le Tele NPN Digital Transistors i le tasi DMOS FET
• Lenei masini e Pb−Free ma Halide Free