SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8

Fa'amatalaga Puupuu:

Tufuga: Vishay
Vaega o oloa:MOSFET
Pepa Fa'amatalaga:SI9945BDY-T1-GE3
Fa'amatalaga:MOSFET 2N-CH 60V 5.3A 8-SOIC
RoHS tulaga: RoHS Compliant


Fa'amatalaga Oloa

Vaega

TALOSAGA

Faailoga o oloa

♠ Faʻamatalaga o oloa

Uiga Oloa Uiga Taua
Tufuga: Vishay
Vaega o oloa: MOSFET
RoHS: Fa'amatalaga
Tekinolosi: Si
Tulaga fa'apipi'i: SMD/SMT
Paket/Mataupu: SOIC-8
Transistor Polarity: N-Alāvai
Numera o Auala: 2 Alavai
Vds - Fa'avai-Apo'a Va'aiga Malosi: 60 V
Id - Fa'a'au'au Fa'aauau le taimi nei: 5.3 A
Rds On - Fa'avai-Source Resistance: 58 mOhm
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Totogi Faitotoa: 13 nC
La'ititi ole Vevela ole Gaioiina: - 55C
Maualuluga Fa'agaioiga Vevela: + 150C
Pd - Fa'amama le Malosi: 3.1 W
Auala ala: Fa'aleleia
igoa Fefa'ataua'iga: TrenchFET
afifiina: Reel
afifiina: Oti le lipine
afifiina: MouseReel
Fa'ailoga: Vishay Semiconductors
Fa'atonuga: Lua
Taimi o le Pau: 10 ns
Fa'asagaga i luma - Min: 15 S
Ituaiga oloa: MOSFET
Taimi tula'i: 15 ns, 65 ns
Fa'asologa: SI9
Aofaiga o pusa falegaosimea: 2500
Vaega laiti: MOSFETs
Ituaiga Transistor: 2 N-Alāvai
Taimi Fa'atuai Taimi masani: 10 ns, 15 ns
Taimi Fa'atuai masani: 15 ns, 20 ns
Vaega # Fa'aigoa: SI9945BDY-GE3
Unit mamafa: 750 mg

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