IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Faʻamatalaga o oloa
| Uiga Oloa | Uiga Taua |
| Tufuga: | Infineon |
| Vaega o oloa: | MOSFET |
| RoHS: | Fa'amatalaga |
| Tekinolosi: | Si |
| Tulaga fa'apipi'i: | SMD/SMT |
| Paket/Mataupu: | TO-252-3 |
| Transistor Polarity: | N-Alāvai |
| Numera o Auala: | 1 alavai |
| Vds - Fa'avai-Apo'a Va'aiga Malosi: | 40 V |
| Id - Fa'a'au'au Fa'aauau le taimi nei: | 50 A |
| Rds On - Fa'avai-Source Resistance: | 9.3 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Totogi Faitotoa: | 18.2 nC |
| La'ititi ole Vevela ole Gaioiina: | - 55C |
| Maualuluga Fa'agaioiga Vevela: | + 175 C |
| Pd - Fa'amama le Malosi: | 41 W |
| Auala ala: | Fa'aleleia |
| Fa'ailoga: | AEC-Q101 |
| igoa Fefa'ataua'iga: | OptiMOS |
| afifiina: | Reel |
| afifiina: | Oti le lipine |
| Fa'ailoga: | Infineon Technologies |
| Fa'atonuga: | Nofofua |
| Taimi o le Pau: | 5 ns |
| Maualuluga: | 2.3 mm |
| Umi: | 6.5 mm |
| Ituaiga oloa: | MOSFET |
| Taimi tula'i: | 7 ns |
| Fa'asologa: | OptiMOS-T2 |
| Aofaiga o pusa falegaosimea: | 2500 |
| Vaega laiti: | MOSFETs |
| Ituaiga Transistor: | 1 N-Alāvai |
| Taimi Fa'atuai Taimi masani: | 4 ns |
| Taimi Fa'atuai masani: | 5 ns |
| Lautele: | 6.22 mm |
| Vaega # Fa'aigoa: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Unit mamafa: | 330 mg |
• Auala N – Faiga fa'aleleia
• AEC agavaa
• MSL1 e oo atu i le 260°C le maualuga o le toe tafe
• 175°C vevela galue
• Oloa lanu meamata (RoHS tausisia)
• 100% Avalanche tofotofoina
