IKW50N65EH5XKSA1 IGBT Transistors ALUSAGA 14
♠ Faʻamatalaga o oloa
| Uiga Oloa | Uiga Taua |
| Tufuga: | Infineon |
| Vaega o oloa: | IGBT Transistors |
| Tekinolosi: | Si |
| Paket/Mata: | TO-247-3 |
| Tulaga fa'apipi'i: | E ala i le Pu |
| Fa'atonuga: | Nofofua |
| Aoina- Emitter Voltage VCEO Max: | 650 V |
| Voltage Saturation Voltage-Emitter: | 1.65 V |
| Maualuluga ole Faitotoa Emitter Voltage: | 20 V |
| Fa'aauau le Aoina ile 25C: | 80 A |
| Pd - Fa'amama le Malosi: | 275 W |
| La'ititi ole Vevela ole Gaioiina: | - 40C |
| Maualuluga Fa'agaioiga Vevela: | + 175 C |
| Fa'asologa: | Alavai IGBT5 |
| afifiina: | Faila |
| Fa'ailoga: | Infineon Technologies |
| Gate-Emitter Leakage taimi nei: | 100 nA |
| Maualuluga: | 20.7 mm |
| Umi: | 15.87 mm |
| Ituaiga oloa: | IGBT Transistors |
| Aofaiga o pusa falegaosimea: | 240 |
| Vaega laiti: | IGBTs |
| igoa Fefa'ataua'iga: | TRENCHSTOP |
| Lautele: | 5.31 mm |
| Vaega # Fa'aigoa: | IKW50N65EH5 SP001257944 |
| Unit mamafa: | 0.213383 oz |
HighspeedH5technologyoffering
• Sili-i-Classefficiency inhardswitchingandresonant topologies
•Plugandplayreplacement of the previous generationIGBTs
•650Vbreakdownvoltage
• LowgatechargeQG
• IGBT fa'apipi'i fa'atasi ma RAPID1fa'ato'atoa fa'ata'atitia fa'ameamea fa'apa'ale'a diode
•Temperature aupito maualuga175°C
• Agavaa e tusa ai ma leJEDEC mo talosaga fa'atatau
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Sapalai malosi e le motusia
•Solarconverters
• Uu faaliliu
• Midtohighrangeswitching frequencyconverters
