FQU2N60CTU MOSFET 600V N-Alāvai Adv Q-FET C-Fa'asologa
♠ Faʻamatalaga o oloa
| Uiga Oloa | Uiga Taua |
| Tufuga: | onsemi |
| Vaega o oloa: | MOSFET |
| Tekinolosi: | Si |
| Tulaga fa'apipi'i: | E ala i le Pu |
| Paket/Mata: | TO-251-3 |
| Transistor Polarity: | N-Alāvai |
| Numera o Auala: | 1 alavai |
| Vds - Fa'avai-Apo'a Va'aiga Malosi: | 600 V |
| Id - Fa'a'au'au Fa'aauau le taimi nei: | 1.9 A |
| Rds On - Fa'avai-Source Resistance: | 4.7 Ohms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Totogi Faitotoa: | 12 nC |
| La'ititi ole Vevela ole Gaioiina: | - 55C |
| Maualuluga Fa'agaioiga Vevela: | + 150C |
| Pd - Fa'amama le Malosi: | 2.5W |
| Auala ala: | Fa'aleleia |
| afifiina: | Faila |
| Fa'ailoga: | onsemi / Fairchild |
| Fa'atonuga: | Nofofua |
| Taimi o le Pau: | 28 ns |
| Fa'asagaga i luma - Min: | 5 S |
| Maualuluga: | 6.3 mm |
| Umi: | 6.8 mm |
| Ituaiga oloa: | MOSFET |
| Taimi tula'i: | 25 ns |
| Fa'asologa: | FQU2N60C |
| Aofaiga o pusa falegaosimea: | 5040 |
| Vaega laiti: | MOSFETs |
| Ituaiga Transistor: | 1 N-Alāvai |
| Ituaiga: | MOSFET |
| Taimi Fa'atuai Taimi masani: | 24 ns |
| Taimi Fa'atuai masani: | 9 ns |
| Lautele: | 2.5 mm |
| Unit mamafa: | 0.011993 oz |
♠ MOSFET – N-Alāvai, QFET 600 V, 1.9 A, 4,7
O lenei N−Channel mode enhancement mode power MOSFET o lo'o fa'aogaina i le fa'aogaina o le laina fa'ato'aga a le onsemi ma le tekonolosi DMOS.O lenei tekonolosi MOSFET ua sili ona faʻatulagaina e faʻaitiitia ai le tetee i luga o le setete, ma ia maua ai le maualuga o le suiga o le gaioiga ma le maualuga o le malosi o le avalanche.O nei masini e fetaui lelei mo sapalai eletise sui, faʻasaʻo faʻamalosi malosi (PFC), ma faʻaeletonika moli moli.
• 1.9 A, 600 V, RDS(i) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A
• Totogi Faitotoa Maualalo (Typ. 8.5 nC)
• Crss Maulalo (Typ. 4.3 pF)
• 100% Avalanche Su'ega
• O Meafaigaluega nei e Sa'oloto ma e Tausi RoHS
